Tamura Masao | Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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概要
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP) | 論文
- Layer-by-Layer Oxidation of Si(001) Surfaces
- A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics