Hayasaka Nobuo | Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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- Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Properties of High-Performance Porous SiOC Low-$k$ Film Fabricated Using Electron-Beam Curing
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- Electrochemical Study of Model Additives on Aluminum Single-Crystal Surfaces
- Structural Studies of High-Performance Low-$k$ Dielectric Materials Improved by Electron-Beam Curing