Wang Lai | State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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概要
- Wang Laiの詳細を見る
- 同名の論文著者
- State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. Chinaの論文著者
関連著者
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WANG Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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Zhao Wei
State Key Laboratory Of Fine Chemicals School Of Chemical Engineering Dalian University Of Technolog
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Luo Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Wang Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Zhao Wei
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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Jiang Yang
State Key Laboratory On Integrated Optoelectronics/tsinghua National Laboratory For Information Scie
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LI Hongtao
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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XI Guangyi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
著作論文
- Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
- Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes