Shiozawa Kazufumi | Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan | 論文
- Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
- XPS Studies on the Surface of Amorphous Pd_Si_ Alloys
- Emission and Focusing Characteristics of a Quintuple-Gated Field Emitter Array
- Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
- A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials