Uchida Ken | Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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- Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japanの論文著者
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan | 論文
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
- Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current