Satoh Masataka | Research Center of Ion Beam Technology and College of Engineering, Hosei University
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概要
Research Center of Ion Beam Technology and College of Engineering, Hosei University | 論文
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors