MERTENS Paul | Interuniversitary Micro-Electronics Center
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概要
Interuniversitary Micro-Electronics Center | 論文
- Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
- Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
- Breakdown and Recovery of Thin Gate Oxides
- Fabrication and Characterization of Artificial Crystal Originated Particles
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime