Jiang Hao | State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
スポンサーリンク
概要
- Jiang Haoの詳細を見る
- 同名の論文著者
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of Chinaの論文著者
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China | 論文
- Influence of V/III ratio of low temperature grown AlN interlayer on the growth of GaN on Si substrate
- Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes
- High Quality GaN Grown on Si(111) Using Fast Coalescence Growth
- Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer
- Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes