Matsukawa T. | Nanoelectronics Research Institiute, AIST
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概要
Nanoelectronics Research Institiute, AIST | 論文
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)
- Work function control of Al-Ni alloy for metal gate application
- Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)