Eiichi Murakami | Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

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概要

関連著者

Kudo Shuichi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Junko Komori
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Hirose Yukinori
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Nakanishi Nobuto
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Kazuhiko Sato
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Tomohiro Yamashita
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Hidekazu Oda
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Keiichiro Kashihara
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Naofumi Murata
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Toshiharu Katayama
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Kyoichiro Asayama
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Eiichi Murakami
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Toshiharu Katayama
Renesas Semiconductor Engineering Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Yukinori Hirose
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Nobuto Nakanishi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Kudo Shuichi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

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著作論文

Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain

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