Ishiwara Hiroshi | Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin | 論文
- Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)
- Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)
- Electrical characteristics of OFETs with thin gate dielectric
- Electrical characteristics of OFETs with thin gate dielectric
- Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)