Haneda H | National Inst. For Materials Sci. Ibaraki Jpn
スポンサーリンク
概要
National Inst. For Materials Sci. Ibaraki Jpn | 論文
- Fabrication of submicron GaAs/AlAs double-barrier resonant tunneling diodes by wet etching with in droplets as mask
- Structure of nanowires fabricated by electron beam induced deposition to connect self-assembled quantum structures (Special issue: Microprocesses & nanotechnology)
- Formation of InGaAs quantum disks using droplet lithography
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths