Shirakawa Naoki | Nanoelectronics Research Institute
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概要
関連著者
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Shirakawa Naoki
Nanoelectronics Research Institute
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SHIRAKAWA Naoki
Nanoelectronics Research Institute, AIST
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Shirakawa Naoki
Nanoelectronics Research Institute Aist
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Ikeda Shin-ichi
Nanoelectronics Research Institute Aist
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Yoshida Yoshiyuki
Nanoelectronics Research Institute (neri) National Institute Of Advanced Industrial Science And Tech
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Ikeda Susumu
Graduate School Of Science And Engineering Yamagata University
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YOSHIDA Yoshiyuki
Nanoelectronics Research Institute, AIST
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Nishizaki S
Kyoto Univ. Kyoto Jpn
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Shirakawa N
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Shirakawa N
Electrotechnical Laboratory
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Shirakawa Naoki
Institute For Solid State Physics The University Of Tokyo
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Shirakawa N
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Imada Shin
Faculty Of Engineering Science Osaka University
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Imada Shin
Division Of Materials Physics Graduate School Of Engineering Science Osaka University
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Ikeda S
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yoshida Yukihiko
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Yoshida Y
Graduate School Of Science Osaka University
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Yoshida Y
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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YOSHIDA Yoshiyuki
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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Imada Shin
Osaka Univ. Osaka Jpn
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Ikeda S
Neutron Science Laboratory Institute Of Materials Structure Science High Energy Accelerator Research
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Kosaka Masashi
Department Of Physics Saitama University
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NARUSHIMA Takayuki
Department of Materials Processing, Tohoku University
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UWATOKO Yoshiya
Institute for Solid State Physics, The University of Tokyo
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HEDO Masato
Faculty of Science, University of the Ryukyus
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NAKANO Takayoshi
Division of Materials and Manufacturing Sciences, Graduate School of Engineering, Osaka University
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Hedo Masato
Faculty Of Science University Of The Ryukyus
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Bando H
Electrotechnical Lab. Tsukuba
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Bando H
Chiba Univ. Chiba Jpn
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MATSUHATA Hirofumi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Narushima Takayuki
Department Of Materials Processing Graduate School Of Engineering Tohoku University
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Kosaka Masashi
Department Of Physics College Of Humanities And Sciences Nihon University
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YANAGISAWA Takashi
Nanoelectronics Research Institute, AIST
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KOIKEGAMI Shigeru
JSPS
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KOIKE Soh
JSPS
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UWATOKO Yoshiya
ISSP, University of Tokyo
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TAKASE Kouichi
Department of Physics, College of Science and Technology, Nihon University
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Yanagisawa T
Nanoelectronics Research Institute Aist
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Shirakawa Naoki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Koikegami S
Jsps Tokyo
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Koikegami Shigeru
Jsps:(present Address) Advance Soft And Iis University Of Tokyo
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Koikegami Shigeru
Nanoelectronics Research Institute
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Matsuhata Hirofumi
Nanoelectronics Research Institute Aist
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Koike Soh
Institute Of Materials Science University Of Tsukuba:electrotechnical Laboratory
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TOKIWA Kazuyasu
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of
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WATANABE Tsuneo
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of
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Koike S
Department Of Physics Ii Science University Of Tokyo
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Nakano Takayoshi
Division Of Materials & Manufacturing Science Graduate School Of Engineering Osaka University
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BANDO Hiroshi
Nanoelectronics Research Institute, AIST
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Tachibana Takahiro
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Yanagisawa Takashi
Nanoelectronics Research Institute Aist
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Sekizawa Kazuko
Department Of Physics And Atomic Energy Research Institute College Of Science And Engineering Nihon
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Kohjiro S
Electrotechnical Lab. Tsukuba Jpn
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Uwatoko Yoshiya
Institute For Solid State Physics (issp) The University Of Tokyo
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Kouno Shinji
Department Of Applied Electronics Tokyo University Of Science
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Takano Yoshiki
Department Of Electrical Engineering Waseda University
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Kawabata Shiro
Nanotechnology Research Institute Aist
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HAGIHARA Koji
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
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SASAKI Keita
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
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NAGASAWA Tohru
Canon Machinery INC
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Tokiwa Kazuyasu
Department Of Applied Electronics Tokyo University Of Science
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Tokiwa Kazuyasu
Department Of Applied Electronics Science University Of Tokyo
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NAGAI Ichiro
Nanoelectronics Research Institute
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UMEYAMA Norio
Nanoelectronics Research Institute
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Hagihara Koji
Dep. Of Adaptive Machine Systems Graduate School Of Engineering Osaka Univ.
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Sasaki Keita
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Yoshida Yoshiyuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Crawford Michael
Dupont Co. Central Research And Development
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Yanagisawa Takashi
Nanoelectronics Research Institute
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Watanabe Tsuneo
Department Of Applied Electronics Tokyo University Of Science
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Watanabe Tsuneo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Watanabe Tsuneo
Departmen of Electrical Engineering, Tokyo Metropolitan University
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HARA Shigeo
Department of Dairy Science, The College of Dairying
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Uwatoko Yoshiya
Institute for Solid State Physics
著作論文
- Uniaxial-Pressure Induced Ferromagnetism of Enhanced Paramagnetic Sr_3Ru_2O_7 (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Magnetic Properties of Ca_3Ru_2O_7 under Uniaxial Pressures(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Hall Effect in Ca_3Ru_2O_7
- An Improved Method for Obtaining Single-Phase Sr_2MoO_4 under Controlled Ultralow Oxygen Partial Pressure : Superconductors
- Oxygen Distribution in Titanium Single Crystal Fabricated by Optical Floating-Zone Method under Extremely Low Oxygen Partial Pressure
- The Synthesis and Characterization of Double-Layered Perovskite Sr_3Mo_2O_7(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Field-induced Magnetic Anisotropy of Single-Crystal GeNi_2O_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)