Fukuda Hisashi | Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El
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- Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of Elの論文著者
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El | 論文
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs