Nannichi Yasuo | Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of | 論文
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
- The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs