Yeh Jeng-ya | Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi

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Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi | 論文

• Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well (λ=1.28-1.45μm) with GaAsP strain-compensated layer
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers

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