Jung S. | Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic | 論文
- Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
- Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Preparation of Layered Li[Ni_Mn_]O_2 by Ultrasonic Spray Pyrolysis Method