Bollaert Sylvain | Institut D'electronique Et De Microelectronique Du Nord U.m.r.-c.n.r.s 9929 Avenue Poincare Uni
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- Institut D'electronique Et De Microelectronique Du Nord U.m.r.-c.n.r.s 9929 Avenue Poincare Uniの論文著者
Institut D'electronique Et De Microelectronique Du Nord U.m.r.-c.n.r.s 9929 Avenue Poincare Uni | 論文
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate : Influence of Indium Content on Material Properties and Device Performance
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance