Lee In-hwan | School Of Advanced Materials Engineering And Research Institute Of Advanced Materials Development Ch
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School Of Advanced Materials Engineering And Research Institute Of Advanced Materials Development Ch | 論文
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer