Stoyanov S. | Institut Fur Festkorperforschung Des Forschungszentrums Jiilich:institute Of Physical Chemistry Bulg
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Institut Fur Festkorperforschung Des Forschungszentrums Jiilich:institute Of Physical Chemistry Bulg | 論文
- 解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth (小特集:結晶成長理論の最近の動向)
- Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces-Can it be Explained by Electromigration of Si Adatoms?