Au Jr. | Sematech
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Sematech | 論文
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility(Session 4A : Channel Engineering)
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility(Session 4A : Channel Engineering)
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
- Interfacial Layer-Induced Mobility Degradation in High-k Transistors
- Reliability of thick oxides integrated with HfSiO_x gate dielectric