Ishino M | Japan Atomic Energy Res. Inst. Kizu Jpn
スポンサーリンク
概要
関連著者
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Ishino M
Japan Atomic Energy Res. Inst. Kizu Jpn
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Ishino Masato
Kansai Research Establishment Japan Atomic Energy Research Institute
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Muto Y
The Institute For Materials Research Tohoku University
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Kito Masahiro
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Kito Masahiro
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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大塚 信之
松下電器半導体センター
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YODA Osamu
Kansai Research Establishment, Japan Atomic Energy Research Institute
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Yoda Osamu
Kansai Research Establishment Japan Atomic Energy Research Institute
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Ohnuki S
Hokkaido Univ. Sapporo Jpn
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Watanabe S
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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Watanabe S
Division Of Materials Science Graduate School Of Engineering Hokkaido University
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Watanabe Seiichi
Department Of Material Science Graduate School Of Engineering Hokkaido University
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Watanabe Seiichi
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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Abe Hiroaki
Takasaki Research Establishment Japan Atomic Energy Research Institute
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KITO Masahiro
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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NAKAMURA Shinji
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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OTSUKA Nobuyuki
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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ISHINO Masato
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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MATSUI Yasushi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Otsuka Nobuyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Telecommunications Advancement Organization Of Japan Sendai Research Center
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Nakamura S
Toshiba Corp. Kawasaki Jpn
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Watanabe Seiichi
Division Of Materials Science Graduate School Of Engineering Hokkaido University
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WATANABE Shigeya
Department of Engineering Physics, Faculty of Engineering, Kyoto University
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ABE Hiroaki
Department of Quantum Engineering and Systems Science, The University of Tokyo
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Ishino Masahiko
Kansai Research Establishment Japan Atomic Energy Research Institute
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ISHINO Masahiko
Advanced Photon Research Center, Kansai Research Establishment. Japan Atomic Energy Research Institu
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YODA Osamu
Advanced Photon Research Center, Kansai Research Establishment. Japan Atomic Energy Research Institu
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HAISHI Yasuyuki
Advanced Materials Laboratory, Department of Materials Science. Faculty of Engineering, Hokkaido Uni
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ARIMOTO Fumiko
Advanced Materials Laboratory, Department of Materials Science. Faculty of Engineering, Hokkaido Uni
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TAKEDA Mitsuhiro
Advanced Materials Laboratory, Department of Materials Science. Faculty of Engineering, Hokkaido Uni
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WATANABE Seiichi
Advanced Materials Laboratory, Department of Materials Science. Faculty of Engineering, Hokkaido Uni
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OHNUKI Somei
Advanced Materials Laboratory, Department of Materials Science. Faculty of Engineering, Hokkaido Uni
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SHIOYA Etsuko
Materials Science Division, Graduate School of Engineering, Hokkaido University
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SUDA Takanori
Materials Science Division, Graduate School of Engineering, Hokkaido University
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WATANABE Seiichi
Materials Science Division, Graduate School of Engineering, Hokkaido University
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OHNUKI Somei
Materials Science Division, Graduate School of Engineering, Hokkaido University
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ABE Hiroaki
Takasaki Research Establishment, Japan Atomic Energy Research Institute
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PHILLIP Fritz
Max-Planck-Institut fur Metallforschung
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Arimoto Fumiko
Advanced Materials Laboratory Department Of Materials Science. Faculty Of Engineering Hokkaido Unive
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Haishi Yasuyuki
Advanced Materials Laboratory Department Of Materials Science. Faculty Of Engineering Hokkaido Unive
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Ishino Masahiko
Kansai Photon Science Institute Japan Atomic Energy Agency
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Ohnuki Somei
Materials Science Division Graduate School Of Engineering Hokkaido University
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Takeda Mitsuhiro
Department Of Materials Science And Engineering Miyagi National College Of Technology
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Matsui Y
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsui Y
Nims Tsukuba Jpn
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Abe Hiroaki
Department Of Biological Production Faculty Of Agriculture Tokyo University Of Agriculture And Techn
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Matsui Y
Central Research Laboratory Hitachi Ltd.
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Suda Takanori
Division Of Materials Science Graduate School Of Engineering Hokkaido University
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Shioya Etsuko
Materials Science Division Graduate School Of Engineering Hokkaido University
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INABA Yuichi
Electronics Research Laboratory, Corporate Research & Development, Matsushita Electronics Corporatio
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KITO Masahiro
Electronics Research Laboratory, Corporate Research & Development, Matsushita Electronics Corporatio
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OHYA Jun
Electronics Research Laboratory, Corporate Research & Development, Matsushita Electronics Corporatio
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ISHINO Masato
Electronics Research Laboratory, Corporate Research & Development, Matsushita Electronics Corporatio
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Inaba Yuichi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Suda Takanori
Department Of Material Science Graduate School Of Engineering Hokkaido University
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Ohya Jun
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Ishino Masato
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporation
著作論文
- Boundary Structure of Mo/Si Multilayers for Soft X-Ray Mirrors
- Electron-Irradiation-Induced Amorphization in Mo/Si Nano-Multilayer Material
- High Output Power Operation of a 1.3 μm Gain-Coupled Distributed Feedback Laser with Narrow Spectral Linewidth
- New Structure of 1.3 μm Strained-Layer Multi-Quantum Well Complex-Coupled Distributed Feedback Lasers
- Novel Structure of 1.3μm Strained-Layer MQW Complex-Coupled DFB Lasers