Inagaki K | Device Fundamentals Section Electrotechnical Laboratory
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概要
Device Fundamentals Section Electrotechnical Laboratory | 論文
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
- Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
- Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress