Fushimi H | Ntt Photonics Lab. Kanagawa Jpn
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概要
Ntt Photonics Lab. Kanagawa Jpn | 論文
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance