Maegawa Shigeto | Mixed Signal Device Technology Department Production And Technology Unit Renesas Technology Corporat
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Mixed Signal Device Technology Department Production And Technology Unit Renesas Technology Corporat | 論文
- Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current : A High ESD Mechanism Analysis
- ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_ Between VDMOS and LDMOS Transistors