Je K‐c | Japan Advanced Inst. Of Sci. And Technol. (jaist) Ishikawa Jpn
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概要
Japan Advanced Inst. Of Sci. And Technol. (jaist) Ishikawa Jpn | 論文
- Theoretical Study for Drastic Improvement of Solar Cell Efficiency
- A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
- Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon
- Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
- The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2