間中 孝彰 | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
Department Of Physical Electronics Tokyo Institute Of Technology | 論文
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Light Emission from Quantum-Box Structure by Current Injection
- Bending Loss Characteristics of MQW Optical Waveguides (Special Issue on Optical Interconnection)