Kim J | Ulsi Laboratory Of Lg Semicon Co. Ltd.
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概要
Ulsi Laboratory Of Lg Semicon Co. Ltd. | 論文
- W as a Bit Line Interconnection in Capacitor-Over-Bit-line (COB) Structured Dynamic Random Access Memory (DRAM) and Feasible Diffusion Barrier Layer
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
- Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide
- Structural Evaluation of CVD WSix and Its Effect on Polycide Line Resistance