Okumura H | Tsukuba Laboratory Taiyo Nippon Sanso Corporation

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Tsukuba Laboratory Taiyo Nippon Sanso Corporation | 論文

• Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
• Effects of High-k Passivation Films on AlGaN/GaN HEMT
• p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
• High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
• Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs

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