Akatsuka M | Advanced Technology Research Laboratories Sumitomo Metal Industries Limited
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概要
Advanced Technology Research Laboratories Sumitomo Metal Industries Limited | 論文
- Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer
- Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
- Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
- Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method