Kunishima Iwao | Ulsi Research Laboratories Toshiba Corporation
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概要
Ulsi Research Laboratories Toshiba Corporation | 論文
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)