Song J | Sungkyukwan Univ. Kyunggi‐do Kor
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概要
Sungkyukwan Univ. Kyunggi‐do Kor | 論文
- Properties of the p^+ poly-Si Gate Fabricated Using the As Preamorphization Method
- As Preamorphization of the Predeposited Amorphous Si Layer for the Formation of the Silicided Ultra Shallow p^+-n Junction