Khan A | Department Of Ee University Of South Carolina
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概要
Department Of Ee University Of South Carolina | 論文
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Planar Schottky Diodes on High Quality A-plane GaN