Nishikawa S | Semiconductor Technol. Academic Res. Center Yokohama Jpn
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概要
Semiconductor Technol. Academic Res. Center Yokohama Jpn | 論文
- Crystal Transformation from Anhydrous α-Maltose to Hydrous β-Maltose and from Anhydrous Trehalose to Hydrous Trehalose
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
- Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique
- High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
- Effects of On-Chip Decoupling Capacitor on Switching Noise and Radiated Emission