Ichikawa A | Toshiba Ceramics Co. R&d Center
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概要
Toshiba Ceramics Co. R&d Center | 論文
- Light Point Defects on Hydrogen Annealed Silicon Wafer
- Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
- Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition