Yang Z | Ibm Microelectronics Division
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概要
Ibm Microelectronics Division | 論文
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
- Transmission Electron Microscopy Study of the Compositionally Graded InGaAs Layer
- Numerical Simulation of Etching and Deposition Processes
- Numerical Simulation of Etching and Deposition Processes