Tsai Min-ying | Department Of Electrical And Computer Engineering University Of California
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概要
関連著者
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Tsai Min-ying
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department University Of California
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Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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CHANG Ya-Hsien
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
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TSAI Min-Ying
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
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Wang Shing-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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White Mark
Materials Department University Of California
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BIERWAGEN Oliver
Materials Department, University of California
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Bierwagen Oliver
Materials Department University Of California
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Chang Yi-an
Department Of Physics National Changhua University Of Education
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Nagata Takahiro
Materials Department University Of California
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Chu Jung-tang
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Mawst Luke
Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi
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Yeh Jeng-ya
Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi
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Lai Fang-i
Department Of Electrical Engineering Yuan Ze University
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Wang Shing-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.
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Wang Shing-Chung
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan R.O.C.
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Chu Chia-Pu
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.
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Kuo Shou-Yi
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.
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Tansu Nelson
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, 27 Memorial Drive West, Bethlehem, PA 18015, U.S.A.
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Kuo Shou-Yi
Department of Electronic Engineering, Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan
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Chang Yi-An
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan R.O.C.
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Yeh Jeng-Ya
Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 2414 Engineering Hall, 1415 Engineering Drive, Madison, WI 35706-1691, U.S.A.
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Lai Fang-I
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.
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Chu Jung-Tang
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan R.O.C.
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Mawst Luke
Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 2414 Engineering Hall, 1415 Engineering Drive, Madison, WI 35706-1691, U.S.A.
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Kuo Hao-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.
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Kuo Hao-Chung
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan R.O.C.
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Chang Ya-Hsien
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan R.O.C.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
著作論文
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
- 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths