Ohuchi Kazuya | Semiconductor Device Engineering Laboratory Toshiba Corporation
スポンサーリンク
概要
関連著者
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Mizuno Tomohisa
Ulsi Research Laboratories Toshiba Corporation
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Mizuno Tomohisa
Ulsi Research Labaratories Toshiba Corporation
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NIIYAMA Hiromi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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Ohba Ryuji
Ulsi Research Laboratories Toshiba Corporation
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Ohuchi Kazuya
Semiconductor Device Engineering Laboratory Toshiba Corporation
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Nakajima K
Tohoku Univ. Sendai Jpn
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Niiyama H
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation
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Niiyama Hiromi
Ulsi Process Engineering Lab. Microelectronics Engineering Lab. Toshiba Corp.
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Mizuno T
Department Of Physics Faculty Of Engineering Yokohama National University
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NAKAJIMA Kazuaki
ULSI Research Laboratories, Toshiba Corporation
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Nakajima Kazuaki
Ulsi Research Laboratories Toshiba Corporation
著作論文
- A High-Performance 0.05 μm SOI MOS FET:Possibility of Velocity Overshoot
- A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure