Koide Yasuo | Sensor Materials Center National Institute For Materials Science (nims)
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概要
関連著者
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Koide Yasuo
Sensor Materials Center National Institute For Materials Science (nims)
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Koide Yasuo
Department Of Materials Science And Engineering Kyoto University
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Koide Yasuo
Sensor Materials Center National Institute For Materials Science
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Koide Y
Kyoto Univ. Kyoto Jpn
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Alvarez Jose
Laboratoire De Genie Electrique De Paris
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LIAO Meiyong
Sensor Materials Center, National Institute for Materials Science (NIMS)
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Liao Meiyong
Sensor Materials Center National Institute For Materials Science (nims)
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MURAKAMI Masanori
Department of Cardiovascular Surgery, Shakaihoken Tokuyama Central Hospital, Shunan
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KOIDE Yasuo
Sensor Materials Center, National Institute for Materials Science (NIMS)
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Koide Yasuo
Department Of Electronics School Of Engineering Nagoya University
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Koide Yasuo
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Murakami Masanori
Department Of Applied Chemistry Tokyo Institute Of Technology
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LIAO Meiyong
Advanced Materials Laboratory, National Institute for Materials Science (NIMS)
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ALVAREZ Jose
International Center for Young Scientists, National Institute for Materials Science (NIMS)
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Imura Masataka
International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims
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KLEIDER Jean-Paul
Laboratoire de Genie Electrique de Paris
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Koizumi Satoshi
Sensor Materials Center National Institute For Materials Science
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OKU Takeo
Department of Materials Science, The University of Shiga Prefecture
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Nakatsuka Osamu
Venture Business Laboratory Kyoto University
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OKU Tomoki
Mitsubishi Electric Corporation, Optoelectronic and Microwave Devices Laboratory
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Oku T
Riken (inst. Physical And Chemical Res.) Saitama Jpn
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Oku Takeo
Department Of Materials Science The University Of Shiga Prefecture
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Koide Yasuo
School Of Engineering Department Of Crystalline Materials Science Nagoya University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Tadanaga Osamu
Department Of Materials Science And Engineering Kyoto University
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Koizumi S
Sensor Materials Center National Institute For Materials Science
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Murakami Masanori
Department Of Materials Science And Engineering Kyoto University
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SUZUKI Akira
Central Research Laboratories, Corporate Research and Development Group, Sharp Corporation
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Teraji T
Sensor Materials Center National Institute For Materials Science
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Teraji Tokuyuki
Sensor Materials Center National Institute For Materials Science
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HASHIMOTO Kazuya
Department of Materials Science and Engineering, Kyoto University
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TERAGAWA Nobuaki
Central Research Laboratories, Sharp Corporation
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TOMOMURA Yoshitaka
Central Research Laboratories, Sharp Corporation
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TAKEI Tomonori
Department of Materials Science and Engineering, Kyoto University
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Teragawa Nobuaki
Central Research Laboratories Sharp Corporation
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Tomomura Yoshitaka
Central Research Laboratories Sharp Corporation
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Koizumi Satoshi
Advanced Materials Laboratory National Institute For Materials Science
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Takei Tomonori
Department Of Materials Science And Engineering Kyoto University
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Suzuki Akira
Central Research Laboratories Corporate R & D Group Sharp Corporation
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Hashimoto Kazuya
Department Of Cultural Anthropology Kyoto Bunkyo University
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Alvarez Jose
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Ecole Supérieure d'Electricité, Universités Paris VI et Paris XI, F-91192 Gif-sur-Yvette Cedex, France
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MURAKAMI Masanori
Department of Materials Science and Engineering, Kyoto University
著作論文
- Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces
- Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe
- Thermal Stability of Diamond Photodiodes Using Tungsten Carbide as Schottky Contact
- Schottky-barrier diamond photodiode using thermally stable WC-based contacts
- Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor (Special Issue on Narrow and Wide-Bandgap Semiconductor Materials)
- Electric Field Breakdown of Lateral Schottky Diodes of Diamond
- Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-Type 4H-SiC