IM Seongil | Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei Univers
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概要
- 同名の論文著者
- Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei Universの論文著者
関連著者
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Oh Min
Department Of Metallurgical Engineering School Of Materials Science And Engineering Yonsei Universit
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Song Jong
Advanced Analysis Center Korea Institute Of Science And Technology
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IM Seongil
Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei Univers
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KIM Hyo
Atomic-scale Surface Science Research Center and Department of Physics, Yonsei University
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Kim Hyo
Atomic-scale Surface Science Research Center & Department Of Physics Yonsei University
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Im Seongil
Department Of Metallurgical Engineering School Of Materials Science And Engineering Yonsei Universit
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Oh Min
Department of Display and Electronic Information Engineering, Soonchunhyang University, Asan, Chungnam 336-745, Korea
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Oh Min
Department of Biomedical Engineering, Inje University
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Jeong J
Hynix Semiconductor Inc. Cheongju‐si Kor
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Whang Chung
Atomic-scale Surface Science Research Center And Department Of Physics Yonsei University
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JEONG Jun
Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei Univers
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CHAE Keun
Atomic-scale Surface Science Research Center and Department of Physics, Yonsei University
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Chae Keun
Atomic-scale Surface Science Research Center And Department Of Physics Yonsei University
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Joo Min
Department Of Metallurgical Engineering School Of Materials Science And Engineering Yonsei Universit
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Kim H
Hanyang Univ. Seoul Kor
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KIM Hyun
Surface Analysis Group, Korea Research Institute of Standards and Science
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Kim H
Department Of Electronics And Computer Engineering Korea University
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Jeong Jun
Department of Automation System, Dongyang Mirae College, 62-160 Gocheok-dong, Guro-gu, Seoul 152-714, Korea
著作論文
- Defect vs. Nanocrystal Luminescence Emitted in Si-Implanted SiO_2 Layers
- Effects of BF_2 and B Implantation-Doping on Crystalline Degradation of Pseudomorphic Metastable Ge_Si_