Yamada So | Electronic Imaging And Devices Research Laboratory Fuji Xerox

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概要

• 同名の論文著者
• Electronic Imaging And Devices Research Laboratory Fuji Xeroxの論文著者

関連著者

• Yamada So

  Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Lid.

• Yamada So

  Electronic Imaging And Devices Research Laboratory Fuji Xerox

• KATO Noriji

  Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.,

• Kato Noriji

  Electronic Imaging And Devices Research Laboratory Fuji Xerox

• Yamada S

  Electronic Imaging And Devices Research Laboratory Fuji Xerox

• Kato Nobuhiro

  Osaka Prefecture University College Of Engineering Department Of Mechanical System Engineering

• Koyanagi Mitsumasa

  Research Center for Integrated Systems, Hiroshima University

• Matsumoto Takuji

  Research Center For Integrated Systems Hiroshima University

• HASHIMOTO Takeshi

  Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien

• Koyanagi Mitsumasa

  Research Center For Integrated Systems Hiroshima University

• FUSE Mario

  Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.,

• HAMANO Toshihisa

  Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.,

• NISHIHARA Yoshio

  Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Lid.

• Hamano T

  Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Ltd.

• Fuse M

  Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Ltd.

• SHIMATANI Tamio

  Research Center for Integrated Systems, Hiroshima University

• Kato N

  Kinki Univ. Wakayama Jpn

• Shimatani Tamio

  Department Of Machine Intelligence And System Engineering Intelligent System Design Laboratory Tohok

• Nishihara Yoshio

  Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Lid.

• Hashimoto Takeshi

  Research Center For Integrated Systems Hiroshima University

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著作論文

• A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs
• Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short-Channel Poly-Si Thin-Film Transistor

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