KOIKE Hidemi | Hitachi Co., Ltd
スポンサーリンク
概要
関連著者
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KOIKE Hidemi
Hitachi Co., Ltd
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Kitano Yasuyuki
Department Of Materials Science Faculty Of Science Hiroshima University
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Kitano Yasuyuki
Department Of Materials Science Hiroshima University
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FUJIKAWA Yoshinori
Department of Materials Science, Hiroshima University
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KAMINO Takeo
Techno Research Laboratories, Hitachi Institute Engineering Co., Ltd.
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YAGUCHI Toshie
Techno Research Laboratories, Hitachi Institute Engineering Co., Ltd.
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TAKESHITA Hidenobu
Department of Materials Science, Hiroshima University
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MATSUMOTO Hiroaki
Techno Research Laboratories, Hitachi Institute Engineering Co., Ltd
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Kamino Takeo
Naka Application Center Hitachi High-technologies Corporation
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YAGUCHI Toshie
Hitachi High Technologies Corp.
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KATO Takeharu
Japan Fine Ceramics Center
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Kamino T
Naka Application Center Hitachi High-technologies Corporation
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J.perez-camacho Juan
Materials And Failure Analysis Group Intel Ireland Fab Operations Leixlip County Kildare
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Koike H
Hitachi High‐technol. Corp. Ibaraki Jpn
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Kitano Y
Shimane Univ. Matsue Jpn
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Nakagawa Mine
Hitachi Science Systcms Ltd
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Fujikawa Y
Hiroshima Univ. Higashi‐hiroshima Jpn
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Fujikawa Yoshinori
Department Of Materials Science Hiroshima University
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Sato M
Seiko Instruments Inc. Shizuoka Jpn
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Takeshita Hidenobu
Department Of Materials Science Hiroshima University
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DUNNE Robert
Materials and Failure Analysis Group, Intel Ireland Fab Operations, Leixlip, County Kildare
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SATO Mitsugu
Hitachi High-Technologies Corporation
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J.KENNEDY Barry
Materials and Failure Analysis Group, Intel Ireland Fab Operations, Leixlip, County Kildare
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Dunne Robert
Materials And Failure Analysis Group Intel Ireland Fab Operations Leixlip County Kildare
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J.kennedy Barry
Materials And Failure Analysis Group Intel Ireland Fab Operations Leixlip County Kildare
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Matsumoto Hiroaki
Techno Research Laboratories Hitachi Institute Engineering Co. Ltd
著作論文
- TEM Observation of Mechanically Alloyed Powder Particles (MAPP) of Mg-Zn Alloy Thinned by the FIB Cutting Technique
- Low voltage FE-STEM for characterization of state-of-the-art silicon SRAM