Oya Hidetoshi | Shonan Inst. Of Technol. Fujisawa‐shi Jpn
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概要
Shonan Inst. Of Technol. Fujisawa‐shi Jpn | 論文
- A Compact Wideband T/R Switching Circuit Utilizing Quadrature Couplers and Gate-and-Drain-Driven HPAs(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- MMIC/Super-MIC/MIC-Combined C- to Ku-Band 2 W Balanced Amplifier Multi-Chip Module (Special Issue on Microwave and Millimeterwave High-power Devices)
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- An Efficient Large-Signal Modeling Method Using Load-Line Analysis and Its Application to Non-linear Characterization of FET
- A Calculation Method of Large-Signal Characteristics of Multi-Stage Power Amplifier Modules Using Source-Pull and Load-Pull Data(Special Issue on Microwave and Millimeter-Wave Module Technology)