Moro Seiichiro | Department of Electrical and Electronics Engineering, University of Fukui
スポンサーリンク
概要
Department of Electrical and Electronics Engineering, University of Fukui | 論文
- Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (レーザ・量子エレクトロニクス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子デバイス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)