大道 博行 | Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea
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概要
Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea | 論文
- Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
- Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
- Fabrication of Cantilevered Tip-on-Aperture Probe for Enhancing Resolution of Scanning Near-Field Optical Microscopy System
- Improvement of Frequency Locking Algorithm for Atomic Frequency Standards
- Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks