Bergner Wolfgang | Siemens AG, Central Research and Development
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概要
Siemens AG, Central Research and Development | 論文
- Charge Losses of N-Doped Trench Cells : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy