Mori Nobuhiro | Research Division, Hitachi Plant Engineering & Construction Corporation
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Research Division, Hitachi Plant Engineering & Construction Corporation | 論文
- Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering(Semiconductor Materials and Devices)
- Immobilization of Nitrifying Bacteria by Polyethylene Glycol Prepolymer
- Immobilization of Activated Sludge by the Acrylamide Method
- Sensitivities of Some Characteristics of Nuclear Equilibrium State to One-Group Constants
- Fabrication of Nanometer Silicon Pillars for Buried-Gate-Type Surrounding Gate Transistor by Silicon Quasi-Isotropic Etching