南部 恭広 | 京都大学大学院工学研究科建築学専攻／DC1
スポンサーリンク
概要
論文 | ランダム
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors
- 30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization
- Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- 特発性肺線維症の臨床研究に欠けているものは何か?