細田 光一 | 応用地質株式会社・技術本部
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概要
論文 | ランダム
- A new spin-functional metal-oxide-semiconductor field-effect transistor based on magnetic tunnel junction technology: pseudo-spin-MOSFET
- Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
- Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET