TAKASHIMA N. | Tokyo A&T University
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概要
Tokyo A&T University | 論文
- Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
- High pressure water vapor annealing for improving HfSiO dielectrics properties
- Crystalline Properties of Laser Crystallized Silicon Films
- The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
- Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors